STD35P6LLF6 Series

P-channel 60 V, 0.025 Ohm typ., 35 A STripFET F6 Power MOSFET in a DPAK package

Catalog

P-channel 60 V, 0.025 Ohm typ., 35 A STripFET F6 Power MOSFET in a DPAK package

Part	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Technology	Vgs (Max)	Mounting Type	FET Type	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Power Dissipation (Max) [Max]
STMicroelectronics STD35P6LLF6	60 V	155 °C	-55 °C	28 mOhm	2.5 V	MOSFET (Metal Oxide)	20 V	Surface Mount	P-Channel	30 nC	35 A	DPAK	4.5 V 10 V	3780 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	70 W

Catalog

P-channel 60 V, 0.025 Ohm typ., 35 A STripFET F6 Power MOSFET in a DPAK package

Description

This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.