STS4D Series

Catalog

MOSFET 2N-CH 60V 4A 8SOIC

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Package / Case	Package / Case	Power - Max [Max]	Supplier Device Package	Configuration	Operating Temperature [Max]	Operating Temperature [Min]	FET Feature	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Mounting Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	FET Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]
STMicroelectronics STS4DNF60	60 V	10 nC	0.154 in	8-SOIC	3.9 mm	2 W	8-SOIC	2 N-Channel (Dual)	150 °C	-55 °C	Logic Level Gate	4 A	90 mOhm	Surface Mount	MOSFET (Metal Oxide)	315 pF	4 V
STMicroelectronics STS4DNFS30	30 V	4.7 nC	0.154 in	8-SOIC	3.9 mm		8-SOIC		150 °C	-55 °C	Schottky Diode (Isolated)	4.5 A	55 mOhm	Surface Mount	MOSFET (Metal Oxide)	330 pF	1 V	N-Channel	2 W	5 V 10 V	20 V
STMicroelectronics STS4DPF30L	30 V		0.154 in	8-SOIC	3.9 mm	2 W	8-SOIC	2 P-Channel (Dual)	150 °C	-55 °C		4 A		Surface Mount	MOSFET (Metal Oxide)		1 V					1350 pF	16 nC	80 mOhm