STFI10N Series
Manufacturer: STMicroelectronics
MOSFET N-CH 650V 10A I2PAKFP
| Part | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | FET Type | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Package / Case | Mounting Type | Vgs(th) (Max) @ Id | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 30 V | 42 nC | 1 Ohm | N-Channel | 150 °C | -55 °C | 10 V | 35 W | MOSFET (Metal Oxide) | 650 V | 10 A | TO-262-3 Full Pack I2PAK | Through Hole | 4.5 V | TO-281 (I2PAKFP) | |||
STMicroelectronics | 30 V | 42 nC | 750 mOhm | N-Channel | 150 °C | -55 °C | 10 V | MOSFET (Metal Oxide) | 620 V | 8.4 A | TO-262-3 Full Pack I2PAK | Through Hole | 4.5 V | TO-281 (I2PAKFP) | 1250 pF | |||
STMicroelectronics | 30 V | 750 mOhm | N-Channel | 150 °C | -55 °C | 10 V | 35 W | MOSFET (Metal Oxide) | 600 V | 10 A | TO-262-3 Full Pack I2PAK | Through Hole | 4.5 V | TO-281 (I2PAKFP) | 70 nC | 1370 pF |