SCT10 Series

Catalog

SICFET N-CH 1200V 12A H2PAK-2

Part	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Supplier Device Package	Package / Case	Vgs (Max) [Max]	Vgs (Max) [Min]	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics SCT10N120H	150 W	690 mOhm	3.5 V	1.2 kV	H2Pak-2	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	25 V	-10 V	N-Channel	200 °C	-55 ░C	Surface Mount	22 nC	290 pF	12 A