MJD112%20(LEGACY%20FAIRCHILD) Series

2.0 A, 100 V NPN Darlington Bipolar Power Transistor

Catalog

2.0 A, 100 V NPN Darlington Bipolar Power Transistor

Part	Operating Temperature	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Package / Case	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]
ON Semiconductor MJD112TF	150 °C	20 µA	DPAK	3 V	2 A	1.75 W	1000	25 MHz	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	100 V

Catalog

2.0 A, 100 V NPN Darlington Bipolar Power Transistor

Key Features

• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

• Straight Lead Version in Plastic Sleeves ("1" Suffix)

• Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)

• Surface Mount Replacements for TIP110-TIP117 Series

• Monolithic Construction With Built-in Base-Emitter Shunt Resistors

• High DC Current Gain hFE= 2,500 (Typ) @ IC= 2.0 Adc

• Complementary Pairs Simplifies Designs

• NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

• These Devices are Pb-Free and are RoHS Compliant

Description

The Darlington Bipolar Power Transistor is designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJD112 (NPN) and MJD117 (PNP) are complementary devices.Replacement Active Part Number:MJD112