DRV8343-Q1 Series
Automotive 12-V to 24-V battery 3-phase smart gate driver with current shunt amplifiers
Manufacturer: Texas Instruments
Catalog
Automotive 12-V to 24-V battery 3-phase smart gate driver with current shunt amplifiers
Key Features
• AEC-Q100 qualified for automotive applicationsTemperature grade 1: –40°C ≤ TA≤ 125°CThree independent half-bridge gate driverDedicated source (SHx) and drain (DLx) pins to support independent MOSFET controlDrives 3 high-side and 3 low-side N-channel MOSFETs (NMOS)Smart gate drive architectureAdjustable slew rate control1.5-mA to 1-A peak source current3-mA to 2-A peak sink currentCharge-pump of gate driver for 100% Duty Cycle3 Integrated current sense amplifiers (CSAs)Adjustable gain (5, 10, 20, 40 V/V)Bidirectional or unidirectional supportSPI (S) and hardware (H) interface available6x, 3x, 1x, and independent PWM modesSupports 3.3-V, and 5-V logic inputsCharge pump output can be used to drive the reverse supply protection MOSFETLinear voltage regulator, 3.3 V, 30 mAIntegrated protection featuresVM undervoltage lockout (UVLO)Charge pump undervoltage (CPUV)Short to battery (SHT_BAT)Short to ground (SHT_GND)MOSFET overcurrent protection (OCP)Gate driver fault (GDF)Thermal warning and shutdown (OTW/OTSD)Fault condition indicator (nFAULT)AEC-Q100 qualified for automotive applicationsTemperature grade 1: –40°C ≤ TA≤ 125°CThree independent half-bridge gate driverDedicated source (SHx) and drain (DLx) pins to support independent MOSFET controlDrives 3 high-side and 3 low-side N-channel MOSFETs (NMOS)Smart gate drive architectureAdjustable slew rate control1.5-mA to 1-A peak source current3-mA to 2-A peak sink currentCharge-pump of gate driver for 100% Duty Cycle3 Integrated current sense amplifiers (CSAs)Adjustable gain (5, 10, 20, 40 V/V)Bidirectional or unidirectional supportSPI (S) and hardware (H) interface available6x, 3x, 1x, and independent PWM modesSupports 3.3-V, and 5-V logic inputsCharge pump output can be used to drive the reverse supply protection MOSFETLinear voltage regulator, 3.3 V, 30 mAIntegrated protection featuresVM undervoltage lockout (UVLO)Charge pump undervoltage (CPUV)Short to battery (SHT_BAT)Short to ground (SHT_GND)MOSFET overcurrent protection (OCP)Gate driver fault (GDF)Thermal warning and shutdown (OTW/OTSD)Fault condition indicator (nFAULT)
Description
AI
The DRV8343-Q1 device is an integrated gate driver for three-phase applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The dedicated Source and Drain pins enable the independent MOSFET control for solenoid application. The DRV8343-Q1 generates the correct gate drive voltages using an integrated charge pump sufficient for the high-side MOSFETs and a linear regulator for the low-side MOSFETs. The Smart Gate Drive architecture supports peak gate drive currents up to 1-A source and 2-A. The DRV8343-Q1 can operate from a single power supply and supports a wide input supply range of 5.5 to 60 V for the gate driver.
The 6x, 3x, 1x, and independent input PWM modes allow for simple interfacing to controller circuits. The configuration settings for the gate driver and device are highly configurable through the SPI or hardware (H/W) interface. The DRV8343-Q1 device integrates three low-side current sense amplifiers that allow bidirectional current sensing on all three phases of the drive stage.
A low-power sleep mode is provided to achieve low quiescent current. Internal protection functions are provided for undervoltage lockout, charge pump fault, MOSFET overcurrent, MOSFET short circuit, phase-node short to supply and ground, gate driver fault, and overtemperature. Fault conditions are indicated on the nFAULT pin with details through the device registers for the SPI device variant.
The DRV8343-Q1 device is an integrated gate driver for three-phase applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The dedicated Source and Drain pins enable the independent MOSFET control for solenoid application. The DRV8343-Q1 generates the correct gate drive voltages using an integrated charge pump sufficient for the high-side MOSFETs and a linear regulator for the low-side MOSFETs. The Smart Gate Drive architecture supports peak gate drive currents up to 1-A source and 2-A. The DRV8343-Q1 can operate from a single power supply and supports a wide input supply range of 5.5 to 60 V for the gate driver.
The 6x, 3x, 1x, and independent input PWM modes allow for simple interfacing to controller circuits. The configuration settings for the gate driver and device are highly configurable through the SPI or hardware (H/W) interface. The DRV8343-Q1 device integrates three low-side current sense amplifiers that allow bidirectional current sensing on all three phases of the drive stage.
A low-power sleep mode is provided to achieve low quiescent current. Internal protection functions are provided for undervoltage lockout, charge pump fault, MOSFET overcurrent, MOSFET short circuit, phase-node short to supply and ground, gate driver fault, and overtemperature. Fault conditions are indicated on the nFAULT pin with details through the device registers for the SPI device variant.
