
ADG636 Series
1pC Charge Injection, 100pA Leakage, CMOS, ±5 V/+5 V/+3 V Dual SPDT Switch
Manufacturer: Analog Devices
Catalog
1pC Charge Injection, 100pA Leakage, CMOS, ±5 V/+5 V/+3 V Dual SPDT Switch
Key Features
• 1 pC Charge Injection
• ±2.7 V to ±5.5 V Dual Supply
• +2.7 V to +5.5 V Single Supply
• Automotive Temperature Range:–40°C to +125°C
• 100 pA (Maximum @ 25°C) Leakage Currents
• 85 Ω Typical On Resistance
• Rail-to-Rail Operation
• Fast Switching Times
• Typical Power Consumption (<0.1 µW)
• TTL/CMOS Compatible Inputs
• 14-Lead TSSOP Package
Description
AI
The ADG636 is a monolithic device, comprising two indepen-dently selectable CMOS single pole, double throw (SPDT) switches. When on, each switch conducts equally well in both directions.The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or from a single supply of +2.7 V to +5.5 V.This switch offers ultralow charge injection of ±1.5 pC over the entire signal range and leakage current of 10 pA typical at 25°C. In addition, it offers on resistance of 85 Ω typical, which is matched to within 2 Ω between channels. The ADG636 also has low power dissipation yet is capable of high switching speeds.The ADG636 exhibits break-before-make switching action and is available in a 14-lead TSSOP package.Product HighlightsUltralow charge injection. QINJ: ±1.5 pC typical over the full signal rangeLeakage current <0.25 nA maximum at 85°CDual ±2.7 V to ±5 V or single +2.7 V to +5.5 V supplyAutomotive temperature range: −40°C to +125°CSmall 14-lead TSSOP packageApplicationsAutomatic test equipmentData acquisition systemsBattery-powered instrumentsCommunication systemsSample-and-hold systemsRemote-powered equipmentAudio and video signal routingRelay replacementAvionics