MCP14E8 Series

2.0A Dual High-Speed Power MOSFET Driver with Enable

Catalog

2.0A Dual High-Speed Power MOSFET Driver with Enable

Part	Input Type	Driven Configuration	Number of Drivers	Package / Case	Package / Case	Package / Case	Channel Type	Supplier Device Package	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Package / Case [y]	Package / Case [x]
Microchip Technology MCP14E8-E/P	Inverting Non-Inverting	Low-Side	2	0.3 in	8-DIP	7.62 mm	Independent	8-PDIP	12 ns	15 ns	150 °C	-40 °C	Through Hole	18 V	4.5 V	2 A	2 A
Microchip Technology MCP14E8-E/SN	Inverting Non-Inverting	Low-Side	2		8-SOIC		Independent	8-SOIC	12 ns	15 ns	150 °C	-40 °C	Surface Mount	18 V	4.5 V	2 A	2 A	3.9 mm	0.154 in
Microchip Technology MCP14E8T-E/SN	Inverting Non-Inverting	Low-Side	2		8-SOIC		Independent	8-SOIC	12 ns	15 ns	150 °C	-40 °C	Surface Mount	18 V	4.5 V	2 A	2 A	3.9 mm	0.154 in
Microchip Technology MCP14E8T-E/MF	Inverting Non-Inverting	Low-Side	2		8-VDFN Exposed Pad		Independent	8-DFN-S (6x5)	12 ns	15 ns	150 °C	-40 °C	Surface Mount	18 V	4.5 V	2 A	2 A

Catalog

2.0A Dual High-Speed Power MOSFET Driver with Enable

Key Features

- High peak output Current: 2 A (typ)

- Independent Enable Function for each Driver

- Low Shoot-Through/Cross-Conduction Current in output Stage

- Wide input supply Operating Range: 4.5 V to 18 V

- 1,000 pF in 15 ns (typical)

- Short Delay Times: 40 ns (typical)

- Matched rise/fall Times

- Low output Impedance: 2.2 Ω (typical)

- Latch-up Protected: Will withstand 1.5 A Reverse Current

- Input are TTL/CMOS compatible and will withstand negative swings Up To 5 V

- ESD Protected: 4 kV

Description

The MCP14E6/E7/E8 devices are a family of 2 A,dual output buffers/MOSFET gate drivers with separate enable functions for each output. As MOSFET gate drivers, the MCP14E6/E7/E8 can charge 1,000 pF gate capacitance in under 20 nsec (max).The inputs are TTL/CMOS compatible and provide 300 mV of hysteresis between the high and low input levels that allows it to be driven from slow rising and falling signals and provide noise immunity.