MJE271 Series

2.0 A, 100 V PNP Darlington Bipolar Power Transistor

Catalog

2.0 A, 100 V PNP Darlington Bipolar Power Transistor

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic [Max]	Mounting Type	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Transistor Type	Current - Collector Cutoff (Max) [Max]	Package / Case
ON Semiconductor MJE271G	1500	100 V	150 °C	-65 °C	TO-126	1.5 W	3 V	Through Hole	6 MHz	2 A	PNP - Darlington	1 mA	TO-126-3 TO-225AA

Catalog

2.0 A, 100 V PNP Darlington Bipolar Power Transistor

Key Features

• High Safe Operating Area IS/B@ 40 V, 1.0 s = 0.375 A - TO-126

• Collector-Emitter Sustaining VoltageVCEO(sus)= 100 Vdc (Min)

• High DC Current GainhFE@ 120 mA, 10 V = 1500 (Min)

• Pb-Free Packages are Available

Description

The Bipolar Power Transistor is designed specifically for use with the MC3419 Solid-State Subscriber Loop Interface Circuit (SLIC).The MJE270 (NPN) and MJE271 (PNP) are complementary devices.