STB30N Series
Manufacturer: STMicroelectronics
MOSFET N-CH 500V 27A D2PAK
| Part | Mounting Type | Package / Case | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Technology | Rds On (Max) @ Id, Vgs | Operating Temperature | FET Type | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | D2PAK | 2740 pF | 10 V | 25 V | 4 V | 500 V | MOSFET (Metal Oxide) | 115 mOhm | 150 °C | N-Channel | 190 W | 27 A | 94 nC | |
STMicroelectronics | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | D2PAK | 2800 pF | 10 V | 25 V | 5 V | 600 V | MOSFET (Metal Oxide) | 130 mOhm | 150 °C | N-Channel | 190 W | 25 A | 100 nC | |
STMicroelectronics | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | D2PAK | 10 V | 30 V | 4 V | 600 V | MOSFET (Metal Oxide) | 130 mOhm | 150 °C | N-Channel | 190 W | 25 A | 91 nC | 2700 pF |