MSC2X50SDA120 Series

700V Dual Silicon Carbide (SiC) Schottky Barrier Diode (SBD)

Catalog

700V Dual Silicon Carbide (SiC) Schottky Barrier Diode (SBD)

Part	Diode Configuration	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Speed	Reverse Recovery Time (trr)	Technology	Current - Reverse Leakage @ Vr	Package / Case	Current - Average Rectified (Io) (per Diode)	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Microchip Technology MSC2X50SDA120J	2 Independent	1.8 V	SOT-227 (ISOTOP®)	No Recovery Time	0 ns	SiC (Silicon Carbide) Schottky	200 µA	SOT-227-4 miniBLOC	50 A	1.2 kV	Chassis Mount	175 ░C	-55 C
Microchip Technology MSC2X50SDA070J	2 Independent	1.8 V	SOT-227 (ISOTOP®)	No Recovery Time	0 ns	SiC (Silicon Carbide) Schottky	200 µA	SOT-227-4 miniBLOC	50 A	700 V	Chassis Mount	175 ░C	-55 C

Catalog

700V Dual Silicon Carbide (SiC) Schottky Barrier Diode (SBD)

Key Features

- No reverse recovery

- Low forward voltage

- Low leakage current

- Avalanche-energy rated

- RoHS compliant

- Isolated voltage to 2500V

Description

MSC2X50SDA120 is part of our newest family of Dual SiC Schottky Barrier Diode (SBD) devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.