JANTX2N5154L-Transistor Series

NPN Silicon Power 80V, 2A

Catalog

NPN Silicon Power 80V, 2A

Part	DC Current Gain (hFE) (Min) @ Ic, Vce	Mounting Type	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic [Max]	Current - Collector (Ic) (Max) [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Grade	Qualification
Microchip Technology 2N5154L	70 hFE	Through Hole	50 µA	1 W	NPN	1.5 V	2 A	TO-205AA TO-5-3 Metal Can	80 V	TO-5AA
Microchip Technology JANTX2N5154L	70 hFE	Through Hole	50 µA	1 W	NPN	1.5 V	2 A	TO-205AA TO-5-3 Metal Can	80 V	TO-5	Military	MIL-PRF-19500/544
Microchip Technology JAN2N5154L	70 hFE	Through Hole	50 µA	1 W	NPN	1.5 V	2 A	TO-205AA TO-5-3 Metal Can	80 V	TO-5	Military	MIL-PRF-19500/544

Catalog

NPN Silicon Power 80V, 2A

Key Features

- JEDEC registered 2N5152 and 2N5154.JANHC, JANKC, JAN, JANTX, JANTXV and JANS RHA qualifications are available per MIL-PRF-19500/544

- High frequency operation

- Lightweight

- High-speed power-switching applications

- High-reliability applications

- Available in TO-02-5AA (TO-5), TO-205AD (TO-39) and surfacemount U3 packages

Description

This specification covers the performance requirements for NPN, silicon, power, 2N5152 and 2N5154 transistors, complimentary to the 2N5151 and 2N5153 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device as specified in MIL-PRF-19500/544. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels ("M", "D", "P", "L", "R", "F", "G", and "H") are provided for JANTXV and JANS product assurance levels.