JANTX2N3421P-Transistor-PIND Series

NPN Silicon Power 60V to 80V, 3A

Catalog

NPN Silicon Power 60V to 80V, 3A

Part	Grade	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Package / Case	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Qualification	Power - Max [Max]
Microchip Technology JANTX2N3421P	Military	Through Hole	40	5 µA	TO-205AA TO-5-3 Metal Can	500 mV	NPN	TO-5AA	3 A	80 V	MIL-PRF-19500/393	1 W

Catalog

NPN Silicon Power 60V to 80V, 3A

Key Features

- The device package for the encapsulated device type are as follows: TO-5 or TO-39, and surface mount version U4 suffix.

- The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/393.

Description

This specification covers the performance requirements for NPN, silicon, 2N3418, 2N3419, 2N3420 and 2N3421 transistors for use in medium power switching applications. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type as specified in MIL-PRF-19500/393 and two levels of product assurance (JANHC and JANKC) for die (element evaluation) are provided, as specified in MIL-PRF-19500/393. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.