Catalog
1.5 A MOSFET Gate Driver
Key Features
- High Peak output Current: 1.5 A (Typical)
- Wide Input Supply Voltage Operating Range: 4.5 V to 18 V
- Low Shoot-Through/Cross-Conduction Current in Output Stage
- High Capacitive Load Drive Capability: 1000 pF in 11.5 ns (typical)
- Short Delay Times: 33 ns (tD1), 24 ns (tD2) (Typical)
- Low Supply Current: 375 µA (Typical)
- Low-Voltage Threshold Input and Enable with Hysteresis
- Latch-Up Protected: Withstands 500 mA Reverse Curret
- 6-Lead SOT-23
- 6-Lead 2 x2 TDFN
Description
AI
The MCP14A0151/2 devices are high-speed MOSFET gate drivers that are capable of providing up to 1.5 A of peak current while operating from a single 4.5 V to 18 V supply. The inverting (MCP14A0151) or non-inverting (MCP14A0152) single channel output is directly controlled from either TTL or CMOS (2 V to 18 V) logic. These MOSFET gate driver also feature low shoot-through current, matched rise and fall times, and short propagation delays which make them ideal for high switching frequency applications. The MCP14A0151/2 family of devices offer enhanced control with Enable functionality. The active-high Enable pin can be driven low to drive the output of the MCP14A0151/2 low, regardless of the status of the Input pin. An integrated pull-up resistor allows the user to leave the Enable pin floating for standard operation. Additionally, the MCP14A0151/2 MOSFET gate drivers feature separate ground pins (AGND and GND), allowing greater noise isolation between the level-sensitive Input/Enable pins and the fast, high-current transitions of the push-pull output stage. These devices are highly latch-up resistant under any condition within their power and voltage ratings. They can accept up to 500 mA of reverse current being forced back into their outputs without damage or logic upset. All terminals are fully protected against electrostatic discharge (ESD) up to 1.75 kV (HBM) and 200 V (MM).
