MSC035SMA070 Series

700V, 35 mOhm, Discrete mSiC™ MOSFET

Catalog

700V, 35 mOhm, Discrete mSiC™ MOSFET

Part	Mounting Type	Vgs (Max) [Min]	Vgs (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs(th) (Max) @ Id	FET Type	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs
Microchip Technology MSC035SMA070B	Through Hole	-10 V	25 V	2010 pF	TO-247-3	2.7 V	N-Channel	700 V	TO-247-3	77 A	283 W	-55 °C	175 ░C	99 nC	44 mOhm
Microchip Technology MSC035SMA070B4	Through Hole	-10 V	23 V	2010 pF	TO-247-4	2.7 V	N-Channel	700 V	TO-247-4	77 A	283 W	-55 °C	175 ░C	99 nC	44 mOhm
Microchip Technology MSC035SMA070S	Surface Mount	-10 V	23 V	2010 pF	D3PAK	2.7 V	N-Channel	700 V	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	65 A	206 W	-55 °C	175 ░C	99 nC	44 mOhm

Catalog

700V, 35 mOhm, Discrete mSiC™ MOSFET

Key Features

• * Low capacitances and low gate charge

• * Fast switching speed due to low internal gate resistance (ESR)

• * Stable operation at high junction temperature, TJ(max) = 175°C

• * Fast and reliable body diode

• * Superior avalanche ruggedness

• * RoHS compliant

Description

MSC035SMA070 is part of our newest family of mSiCTM MOSFET devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.