STP6N Series
Manufacturer: STMicroelectronics
MOSFET N-CH 525V 5A TO220
| Part | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id | Technology | Operating Temperature | Rds On (Max) @ Id, Vgs | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Supplier Device Package | Package / Case | FET Type | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Operating Temperature [Max] | Operating Temperature [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 26 nC | 670 pF | 4.5 V | MOSFET (Metal Oxide) | 150 °C | 1.2 Ohm | 30 V | 5 A | 525 V | TO-220 | TO-220-3 | N-Channel | Through Hole | 10 V | 70 W | ||||
STMicroelectronics | 45.5 nC | 4 V | MOSFET (Metal Oxide) | 150 °C | 1.2 Ohm | 30 V | 6 A | 600 V | TO-220 | TO-220-3 | N-Channel | Through Hole | 10 V | 1020 pF | 125 W | ||||
STMicroelectronics | 930 pF | 4.5 V | MOSFET (Metal Oxide) | 1.8 Ohm | 30 V | 5 A | 700 V | TO-220 | TO-220-3 | N-Channel | Through Hole | 10 V | 110 W | 150 °C | -55 °C |