Catalog
Complementary power transistors
Description
AI
The devices are manufactured in epitaxial-base planar technology and are suitable for power linear and switching applications.
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Complementary power transistors
Complementary power transistors
| Part | Current - Collector Cutoff (Max) [Max] | Transistor Type | Voltage - Collector Emitter Breakdown (Max) [Max] | Supplier Device Package | Frequency - Transition | Operating Temperature | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Current - Collector (Ic) (Max) [Max] | Vce Saturation (Max) @ Ib, Ic | Package / Case | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | 1 mA | PNP | 100 V | TO-247-3 | 3 MHz | 150 °C | 10 | 25 A | 4 V | TO-247-3 | Through Hole |