STH410N4F7-2AG Series

Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-2 package

Catalog

Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-2 package

Part	Package / Case	Current - Continuous Drain (Id) @ 25°C	Qualification	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Grade	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics STH410N4F7-2AG	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	200 A	AEC-Q101	40 V	Surface Mount	1.1 mOhm	H2Pak-2	365 W	11500 pF	N-Channel	175 °C	-55 °C	Automotive	20 V	10 V	4.5 V	MOSFET (Metal Oxide)	141 nC

Catalog

Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-2 package

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.