SCT040H120G3AG Series

Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package

Catalog

Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package

Part	Drain to Source Voltage (Vdss)	Package / Case	Qualification	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Rds On (Max) @ Id, Vgs	Grade	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max) [Max]	Mounting Type	Power Dissipation (Max)
STMicroelectronics SCT040H120G3AG	1.2 kV	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	AEC-Q101	15 V 18 V	1329 pF	4.2 V	H2PAK-7	54 mOhm	Automotive	175 °C	-55 °C	N-Channel	54 nC	-5 V 18 V	Surface Mount	300 W

Catalog

Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.