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Integrated Circuits (ICs)

R1EV5801MBTDRDI#B0

Obsolete
Renesas Electronics Corporation

1M EEPROM (128-KWORD × 8-BIT)READY/ BUSY AND RES FUNCTION

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Integrated Circuits (ICs)

R1EV5801MBTDRDI#B0

Obsolete
Renesas Electronics Corporation

1M EEPROM (128-KWORD × 8-BIT)READY/ BUSY AND RES FUNCTION

Technical Specifications

Parameters and characteristics for this part

SpecificationR1EV5801MBTDRDI#B0
Access Time150 ns
Memory FormatEEPROM
Memory InterfaceParallel
Memory Organization128K x 8
Memory Size1 Mbit
Memory TypeNon-Volatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case32-TFSOP
Package / Case [y]0.488 in
Package / Case [y]12.4 mm
Supplier Device Package32-TSOP I
TechnologyEEPROM
Voltage - Supply [Max]5.5 V
Voltage - Supply [Min]2.7 V
Write Cycle Time - Word, Page10 ms

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

R1EV5801MBTDRDI Series

Renesas Electronics’ R1EV5801MB is an electrically erasable and programmable ROM organized as 131072-word  8-bit. It has realized High-Speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. It also has a 128-byte page programming function to make the write operations faster.