R1EV5801MBTDRDI#B0
Obsolete1M EEPROM (128-KWORD × 8-BIT)READY/ BUSY AND RES FUNCTION
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R1EV5801MBTDRDI#B0
Obsolete1M EEPROM (128-KWORD × 8-BIT)READY/ BUSY AND RES FUNCTION
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Technical Specifications
Parameters and characteristics for this part
| Specification | R1EV5801MBTDRDI#B0 |
|---|---|
| Access Time | 150 ns |
| Memory Format | EEPROM |
| Memory Interface | Parallel |
| Memory Organization | 128K x 8 |
| Memory Size | 1 Mbit |
| Memory Type | Non-Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 32-TFSOP |
| Package / Case [y] | 0.488 in |
| Package / Case [y] | 12.4 mm |
| Supplier Device Package | 32-TSOP I |
| Technology | EEPROM |
| Voltage - Supply [Max] | 5.5 V |
| Voltage - Supply [Min] | 2.7 V |
| Write Cycle Time - Word, Page | 10 ms |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
R1EV5801MBTDRDI Series
Renesas Electronics’ R1EV5801MB is an electrically erasable and programmable ROM organized as 131072-word 8-bit. It has realized High-Speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. It also has a 128-byte page programming function to make the write operations faster.
Documents
Technical documentation and resources