Specification	MJE5730G

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	30
Frequency - Transition	10 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-220-3
Power - Max [Max]	40 W
Supplier Device Package	TO-220
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max)	300 V

MJE5730 Series

1.0 A, 300 V PNP Bipolar Power Transistor

Part	Transistor Type	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Vce Saturation (Max) @ Ib, Ic
ON Semiconductor MJE5730G	PNP	Through Hole	300 V	1 mA	30	10 MHz	1 A	40 W	TO-220	150 °C	-65 °C	TO-220-3	1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The Bipolar Power Transistor is designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications.

Technical documentation and resources