Discrete Semiconductor Products

KSB564ACYBU

Obsolete

TRANS PNP 25V 1A TO92-3

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Discrete Semiconductor Products

Obsolete

TRANS PNP 25V 1A TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	KSB564ACYBU

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	110 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	800 mW
Supplier Device Package	TO-92-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	25 V

Part	Operating Temperature	Transistor Type	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Package / Case	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Mounting Type	Frequency - Transition
ON Semiconductor KSB564ACYBU	150 °C	PNP	TO-92-3	1 A	800 mW	TO-226-3 TO-92-3	500 mV	25 V	120	100 nA	Through Hole	110 MHz
ON Semiconductor KSB564ACYBU	150 °C	PNP	TO-92-3	1 A	800 mW	TO-226-3 TO-92-3	500 mV	25 V	120	100 nA	Through Hole	110 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 25 V 1 A 110MHz 800 mW Through Hole TO-92-3

Technical documentation and resources