Specification	KSC2330OTA

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	70 hFE
Frequency - Transition	50 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-92-3 Long Body, Formed Leads, TO-226-3
Power - Max [Max]	1 W
Supplier Device Package	TO-92-3
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	300 V

KSC2330 Series

Part	Supplier Device Package	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Power - Max [Max]	Operating Temperature	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Mounting Type
ON Semiconductor KSC2330ABU	TO-92-3	TO-226-3 TO-92-3 Long Body	40	NPN	1 W	150 °C	50 MHz	100 mA	100 nA	400 V	Through Hole
ON Semiconductor KSC2330ASHBU	TO-92-3	TO-226-3 TO-92-3 Long Body	40	NPN	1 W	150 °C	50 MHz	100 mA	100 nA	400 V	Through Hole
ON Semiconductor KSC2330OTA	TO-92-3	Formed Leads TO-226-3 TO-92-3 Long Body	70 hFE	NPN	1 W	150 °C	50 MHz	100 mA	100 nA	300 V	Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 300 V 100 mA 50MHz 1 W Through Hole TO-92-3

Technical documentation and resources