Discrete Semiconductor Products

SIA938DJT-T1-GE3

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MOSFET 2N-CH 20V 4.5A SC70-6

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Discrete Semiconductor Products

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MOSFET 2N-CH 20V 4.5A SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIA938DJT-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	4.5 A, 4.5 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs [Max]	11.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	425 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-70-6 Dual
Rds On (Max) @ Id, Vgs [Max]	21.5 mOhm
Supplier Device Package	PowerPAK® SC-70-6 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

Part	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Configuration	Technology	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SIA938DJT-T1-GE3	21.5 mOhm	20 V	1.5 V	425 pF	2 N-Channel (Dual)	MOSFET (Metal Oxide)	Surface Mount	4.5 A 4.5 A	PowerPAK® SC-70-6 Dual	PowerPAK® SC-70-6 Dual	-55 °C	150 °C	11.5 nC

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General part information

Mosfet Array 20V 4.5A (Ta), 4.5A (Tc) 1.9W (Ta), 7.8W (Tc) Surface Mount PowerPAK® SC-70-6 Dual

Technical documentation and resources