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Discrete Semiconductor Products
NGTD20T120F2SWK
ObsoleteON Semiconductor
IGBT TRENCH FIELD STOP 1200V DIE
Discrete Semiconductor Products
NGTD20T120F2SWK
ObsoleteON Semiconductor
IGBT TRENCH FIELD STOP 1200V DIE
Technical Specifications
Parameters and characteristics for this part
| Specification | NGTD20T120F2SWK |
|---|---|
| Current - Collector Pulsed (Icm) | 100 A |
| IGBT Type | Trench Field Stop |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | Die |
| Supplier Device Package | Die |
| Vce(on) (Max) @ Vge, Ic | 2.4 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 1200 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
NGTD20T120F2 Series
This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss.
Documents
Technical documentation and resources