SQJ138EP-T1_GE3

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MOSFET N-CH 40V 330A PPAK SO-8

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MOSFET N-CH 40V 330A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJ138EP-T1_GE3

Current - Continuous Drain (Id) @ 25°C	330 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	81 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	4715 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	312 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	1.8 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	FET Type	Mounting Type	Vgs (Max)	Vgs(th) (Max) @ Id	Qualification	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Grade
Vishay General Semiconductor - Diodes Division SQJ138EP-T1_GE3	N-Channel	Surface Mount	20 V	3.5 V	AEC-Q101	PowerPAK® SO-8	MOSFET (Metal Oxide)	1.8 mOhm	81 nC	4715 pF	330 A	10 V	PowerPAK® SO-8	312 W	40 V	-55 °C	175 ░C	Automotive

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General part information

N-Channel 40 V 330A (Tc) 312W (Tc) Surface Mount PowerPAK® SO-8

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