BUK9M15-40HX

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MOSFET N-CH 40V 30A LFPAK33

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Discrete Semiconductor Products

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MOSFET N-CH 40V 30A LFPAK33

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9M15-40HX

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	16.2 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1026 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	44 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	15 mOhm
Supplier Device Package	LFPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2.2 V

Part	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Technology	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Supplier Device Package	Vgs (Max)	Grade	Vgs(th) (Max) @ Id	Qualification	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)
Freescale Semiconductor - NXP BUK9M15-40HX	Surface Mount	16.2 nC	44 W	MOSFET (Metal Oxide)	15 mOhm	4.5 V 10 V	N-Channel	LFPAK33	16 V	Automotive	2.2 V	AEC-Q101	-55 °C	175 ░C	30 A	1026 pF	40 V

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General part information

N-Channel 40 V 30A (Tc) 44W (Tc) Surface Mount LFPAK33

Technical documentation and resources