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8-WDFN
Discrete Semiconductor Products

NVTFS4C08NWFTWG

Obsolete
ON Semiconductor

SINGLE N-CHANNEL POWER MOSFET 30V, 55A, 5.9MΩ

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8-WDFN
Discrete Semiconductor Products

NVTFS4C08NWFTWG

Obsolete
ON Semiconductor

SINGLE N-CHANNEL POWER MOSFET 30V, 55A, 5.9MΩ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNVTFS4C08NWFTWG
Current - Continuous Drain (Id) @ 25°C17 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs18.2 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]1113 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerWDFN
Power Dissipation (Max)31 W, 3.1 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs5.9 mOhm
Supplier Device Package8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id [Max]2.2 V

NVTFS4C13N Series

Power MOSFET 30V, 30A, 10.5 mOhm, Single N-Channel, u8FL, Logic Level.

PartGradeCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ Vgs [Max]Rds On (Max) @ Id, VgsPackage / CasePower Dissipation (Max)Vgs (Max)Vgs(th) (Max) @ Id [Max]Drain to Source Voltage (Vdss)Mounting TypeFET TypeSupplier Device PackageInput Capacitance (Ciss) (Max) @ VdsQualificationTechnologyDrive Voltage (Max Rds On, Min Rds On)Operating Temperature [Min]Operating Temperature [Max]Gate Charge (Qg) (Max) @ VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ Vds [Max]
8-WDFN
ON Semiconductor
Automotive
21 A
26 nC
4.2 mOhm
8-PowerWDFN
3.1 W
37 W
20 V
2.2 V
30 V
Surface Mount
N-Channel
8-WDFN (3.3x3.3)
1683 pF
AEC-Q101
MOSFET (Metal Oxide)
4.5 V
10 V
-55 °C
175 ░C
8-WDFN
ON Semiconductor
Automotive
15.3 A
47 A
19.3 nC
7.4 mOhm
8-PowerWDFN
3 W
28 W
20 V
2.2 V
30 V
Surface Mount
N-Channel
8-WDFN (3.3x3.3)
AEC-Q101
MOSFET (Metal Oxide)
4.5 V
10 V
-55 °C
175 ░C
onsemi-NVMFS5C426NWFAFT3G MOSFETs Trans MOSFET N-CH 40V 41A 8-Pin WDFN EP T/R Automotive AEC-Q101
ON Semiconductor
Automotive
14 A
9.4 mOhm
8-PowerWDFN
3 W
26 W
20 V
30 V
Surface Mount
N-Channel
8-WDFN (3.3x3.3)
770 pF
AEC-Q101
MOSFET (Metal Oxide)
4.5 V
10 V
-55 °C
175 ░C
15.2 nC
2.1 V
onsemi-NVMFS5C426NWFAFT3G MOSFETs Trans MOSFET N-CH 40V 41A 8-Pin WDFN EP T/R Automotive AEC-Q101
ON Semiconductor
Automotive
15.3 A
47 A
19.3 nC
7.4 mOhm
8-PowerWDFN
3 W
28 W
20 V
2.2 V
30 V
Surface Mount
N-Channel
8-WDFN (3.3x3.3)
AEC-Q101
MOSFET (Metal Oxide)
4.5 V
10 V
-55 °C
175 ░C
8-WDFN
ON Semiconductor
Automotive
13 A
6 nC
10.5 mOhm
8-PowerWDFN
3.1 W
21 W
20 V
30 V
Surface Mount
N-Channel
8-WDFN (3.3x3.3)
750 pF
AEC-Q101
MOSFET (Metal Oxide)
4.5 V
10 V
-55 °C
175 ░C
2.5 V
8-WDFN
ON Semiconductor
8-WDFN
ON Semiconductor
Automotive
17 A
5.9 mOhm
8-PowerWDFN
3.1 W
31 W
20 V
2.2 V
30 V
Surface Mount
N-Channel
8-WDFN (3.3x3.3)
AEC-Q101
MOSFET (Metal Oxide)
4.5 V
10 V
-55 °C
175 ░C
18.2 nC
1113 pF
8-WDFN
ON Semiconductor
Automotive
14 A
9.4 mOhm
8-PowerWDFN
3 W
26 W
20 V
30 V
Surface Mount
N-Channel
8-WDFN (3.3x3.3)
770 pF
AEC-Q101
MOSFET (Metal Oxide)
4.5 V
10 V
-55 °C
175 ░C
15.2 nC
2.1 V
8-WDFN
ON Semiconductor
Automotive
21 A
26 nC
4.2 mOhm
8-PowerWDFN
3.1 W
37 W
20 V
2.2 V
30 V
Surface Mount
N-Channel
8-WDFN (3.3x3.3)
1683 pF
AEC-Q101
MOSFET (Metal Oxide)
4.5 V
10 V
-55 °C
175 ░C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

NVTFS4C13N Series

Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.