Discrete Semiconductor Products

SIC0860P-BP

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DIODE SCHOTTKY 650V 8A 2-PIN(2+TAB) TO-220AC

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Discrete Semiconductor Products

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DIODE SCHOTTKY 650V 8A 2-PIN(2+TAB) TO-220AC

Technical Specifications

Parameters and characteristics for this part

Specification	SIC0860P-BP

Capacitance @ Vr, F	30 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	36 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220AC
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.6 V

Part	Mounting Type	Technology	Speed	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Package / Case
Micro Commercial Components SIC0860P-BP	Through Hole	SiC (Silicon Carbide) Schottky	No Recovery Time	36 µA	30 pF	650 V	175 ░C	-55 C	TO-220AC	0 ns	8 A	1.6 V	TO-220-2
Micro Commercial Components SIC0860PL8-TP	Surface Mount	SiC (Silicon Carbide) Schottky	No Recovery Time	36 µA	346 pF	650 V	175 ░C	-55 C	DFN8080A	0 ns	8 A	1.6 V	4-PowerVSFN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 8A Through Hole TO-220AC

Technical documentation and resources