
Discrete Semiconductor Products
PBSS9110Y,115
ObsoleteNexperia USA Inc.
BIPOLAR TRANSISTORS - BJT PBSS9110Y/SOT363/SC-88
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DocumentsPBSS9110Y,115 Datasheet (PDF)

Discrete Semiconductor Products
PBSS9110Y,115
ObsoleteNexperia USA Inc.
BIPOLAR TRANSISTORS - BJT PBSS9110Y/SOT363/SC-88
Deep-Dive with AI
DocumentsPBSS9110Y,115 Datasheet (PDF)
Technical Specifications
Parameters and characteristics for this part
| Specification | PBSS9110Y,115 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 150 |
| Frequency - Transition | 100 MHz |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-363, SC-88, 6-TSSOP |
| Power - Max [Max] | 625 mW |
| Qualification | AEC-Q100 |
| Supplier Device Package | 6-TSSOP |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 320 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
PBSS9110 Series
PNP low VCEsatBreakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.
Documents
Technical documentation and resources