Discrete Semiconductor Products
US6M11TR
ActiveRohm Semiconductor
TRANS MOSFET N/P-CH 20V/12V 1.5A/1.3A 6-PIN TUMT T/R
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Discrete Semiconductor Products
US6M11TR
ActiveRohm Semiconductor
TRANS MOSFET N/P-CH 20V/12V 1.5A/1.3A 6-PIN TUMT T/R
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | US6M11TR |
|---|---|
| Configuration | N and P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.3 A, 1.5 A |
| Drain to Source Voltage (Vdss) [Max] | 20 V |
| Drain to Source Voltage (Vdss) [Min] | 12 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 1.8 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 110 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 6-SMD, Flat Leads |
| Power - Max [Max] | 1 W |
| Rds On (Max) @ Id, Vgs | 180 mOhm |
| Supplier Device Package | TUMT6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
US6M11 Series
Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Documents
Technical documentation and resources