Discrete Semiconductor Products

PMPB13XNEAX

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PMPB13XNEA/SOT1220/SOT1220

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Discrete Semiconductor Products

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PMPB13XNEA/SOT1220/SOT1220

Technical Specifications

Parameters and characteristics for this part

Specification	PMPB13XNEAX

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	36 nC
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max)	1.7 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	16 mOhm
Supplier Device Package	DFN2020MD-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	900 mV

Part	Rds On (Max) @ Id, Vgs [Max]	Technology	Package / Case	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Grade	Qualification	Rds On (Max) @ Id, Vgs
Freescale Semiconductor - NXP PMPB13UPX	16 mOhm	MOSFET (Metal Oxide)	6-UDFN Exposed Pad	900 mV	39 nC	8 V	12 V	9.1 A	2 W 12.5 W	Surface Mount	-55 °C	150 °C	DFN2020MD-6	P-Channel	2230 pF	1.5 V 4.5 V
Freescale Semiconductor - NXP PMPB13XNEAX		MOSFET (Metal Oxide)	6-UDFN Exposed Pad	900 mV	36 nC	8 V	30 V	8 A	1.7 W	Surface Mount	-55 °C	150 °C	DFN2020MD-6	N-Channel		4.5 V	Automotive	AEC-Q101	16 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 8A (Tj) 1.7W (Ta) Surface Mount DFN2020MD-6

Technical documentation and resources