Discrete Semiconductor Products

IXTH7P50

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DISC MOSFET P CHANNEL-STD TO-247AD/ TUBE

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Discrete Semiconductor Products

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DISC MOSFET P CHANNEL-STD TO-247AD/ TUBE

Technical Specifications

Parameters and characteristics for this part

Specification	IXTH7P50

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	130 nC
Input Capacitance (Ciss) (Max) @ Vds	3400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	180 W
Rds On (Max) @ Id, Vgs	1.5 Ohm
Supplier Device Package	TO-247 (IXTH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Power Dissipation (Max)	Supplier Device Package	Package / Case	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs
Littelfuse/Commercial Vehicle Products IXTH7P50	180 W	TO-247 (IXTH)	TO-247-3	5 V	130 nC	Through Hole	20 V	-55 °C	150 °C	MOSFET (Metal Oxide)	500 V	7 A	P-Channel	3400 pF	10 V	1.5 Ohm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 500 V 7A (Tc) 180W (Tc) Through Hole TO-247 (IXTH)

Technical documentation and resources