Technical Specifications
Parameters and characteristics for this part
| Specification | NCP3418DR2 |
|---|---|
| Channel Type | Synchronous |
| Driven Configuration | Half-Bridge |
| Gate Type | N-Channel MOSFET |
| High Side Voltage - Max (Bootstrap) [Max] | 30 V |
| Input Type | Non-Inverting |
| Logic Voltage - VIL, VIH | 0.8 V, 2 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | 0 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Rise / Fall Time (Typ) [custom] | 10 ns |
| Rise / Fall Time (Typ) [custom] | 18 ns |
| Supplier Device Package | 8-SOIC |
| Voltage - Supply [Max] | 13.2 V |
| Voltage - Supply [Min] | 4.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
NCP3418 Series
The NCP3418 and NCP3418A are dual MOSFET gate drivers optimized to drive the gates of both high-side and low-side power MOSFETs in a synchronous buck converter. Each of the drivers is capable of driving a 3000 pF load with a 25 ns propagation delay and a 20 ns transition time. With a wide operating voltage range, high or low side MOSFET gate drive voltage can be optimized for the best efficiency. Internal, adaptive nonoverlap circuitry further reduces switching losses by preventing simultaneous conduction of both MOSFETs.
Documents
Technical documentation and resources
