A2T18H450W19SR6

Obsolete

RF MOSFET LDMOS NI1230

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Discrete Semiconductor Products

Obsolete

RF MOSFET LDMOS NI1230

Technical Specifications

Parameters and characteristics for this part

Part	Power - Output	Voltage - Rated	Supplier Device Package	Package / Case	Mounting Type	Gain	Current Rating (Amps)	Current - Test	Frequency [Max]	Frequency [Min]	Voltage - Test	Frequency
Freescale Semiconductor - NXP A2T18S260W12NR3	280 W	65 V	OM-880X-2L2L	OM-880X-2L2L	Chassis Mount	18.7 dB	10 µA	1.5 A	1.88 GHz	1.805 GHz	28 V
Freescale Semiconductor - NXP A2T18H455W23NR6	56 dBm	65 V	OM-1230-4L2S	OM-1230-4L2S	Chassis Mount	14.5 dBi	10 µA	1.08 A	1.88 GHz	1.805 GHz	31.5 V
Freescale Semiconductor - NXP A2T18S262W12NR3	231 W	65 V	OM-880X-2L2L	OM-880X-2L2L	Chassis Mount	19.3 dB	10 µA	1.6 A	1.88 GHz	1.805 GHz	28 V
Freescale Semiconductor - NXP A2T18H450W19SR6	89 W	30 V	NI-1230S-4S4S	NI-1230S-4S4S	Chassis Mount	16.5 dBi			1.88 GHz	1.805 GHz
Freescale Semiconductor - NXP A2T18S160W31SR3	32 W	65 V	NI-780S-2L2LA	NI-780S-2L2LA	Surface Mount	19.9 dB		1 A			28 V	1.88 GHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

RF Mosfet 1.805GHz ~ 1.88GHz 16.5dB 89W NI-1230S-4S4S

Technical documentation and resources