Discrete Semiconductor Products

SIA446DJ-T1-GE3

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MOSFET N-CH 150V 7.7A PPAK SC70

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Discrete Semiconductor Products

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MOSFET N-CH 150V 7.7A PPAK SC70

Technical Specifications

Parameters and characteristics for this part

Specification	SIA446DJ-T1-GE3

Current - Continuous Drain (Id) @ 25°C	7.7 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8 nC
Input Capacitance (Ciss) (Max) @ Vds	230 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-70-6
Power Dissipation (Max)	3.5 W, 19 W
Rds On (Max) @ Id, Vgs	177 mOhm
Supplier Device Package	PowerPAK® SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Gate Charge (Qg) (Max) @ Vgs	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	FET Type
Vishay General Semiconductor - Diodes Division SIA446DJ-T1-GE3	8 nC	MOSFET (Metal Oxide)	-55 °C	150 °C	PowerPAK® SC-70-6	150 V	6 V 10 V	PowerPAK® SC-70-6	3.5 W 19 W	230 pF	177 mOhm	Surface Mount	3.5 V	7.7 A	20 V	N-Channel

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General part information

N-Channel 150 V 7.7A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6

Technical documentation and resources