UPA2210T1M-T1-AT

Obsolete

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

Technical Specifications

Parameters and characteristics for this part

Specification	UPA2210T1M-T1-AT

Current - Continuous Drain (Id) @ 25°C	7.2 A
Drain to Source Voltage (Vdss)	20 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16.3 nC
Input Capacitance (Ciss) (Max) @ Vds	1350 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-SMD, Flat Lead
Power Dissipation (Max)	1.1 W
Rds On (Max) @ Id, Vgs	29 mOhm
Supplier Device Package	8-VSOF
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

N-Channel Mos Field Effect Transistor For Switching

Part	Operating Temperature	Supplier Device Package	Vgs(th) (Max) @ Id	FET Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Technology	Power Dissipation (Max)	Drain to Source Voltage (Vdss)
Renesas Electronics Corporation UPA2210T1M-T2-AT
Renesas Electronics Corporation UPA2210T1M-T1-AT	150 °C	8-VSOF	1.5 V	P-Channel	29 mOhm	16.3 nC	Surface Mount	7.2 A	1350 pF	8-SMD Flat Lead	MOSFET (Metal Oxide)	1.1 W	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	427	$ 0.70

General part information

The UPA2210T1M is a N-Channel Mos Field Effect Transistor For Switching.

Technical documentation and resources

No documents available