Discrete Semiconductor Products

V1FM10-M3/I

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DIODE SCHOTTKY 100V 1A DO219AB

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Discrete Semiconductor Products

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DIODE SCHOTTKY 100V 1A DO219AB

Technical Specifications

Parameters and characteristics for this part

Specification	V1FM10-M3/I

Capacitance @ Vr, F	95 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	DO-219AB
Speed	200 mA, 500 ns
Supplier Device Package	DO-219AB (SMF)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	770 mV

Part	Technology	Supplier Device Package	Grade	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Package / Case	Speed	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Qualification	Capacitance @ Vr, F
Vishay General Semiconductor - Diodes Division V1FM10HM3/I	Schottky	DO-219AB (SMF)	Automotive	100 V	1 A	DO-219AB	200 mA 500 ns	-40 °C	175 ░C	50 µA	770 mV	Surface Mount	AEC-Q101	95 pF
Vishay General Semiconductor - Diodes Division V1FM10-M3/I	Schottky	DO-219AB (SMF)		100 V	1 A	DO-219AB	200 mA 500 ns	-40 °C	175 ░C	50 µA	770 mV	Surface Mount		95 pF
Vishay General Semiconductor - Diodes Division V1FM10-M3/H	Schottky	DO-219AB (SMF)		100 V	1 A	DO-219AB	200 mA 500 ns	-40 °C	175 ░C	50 µA	770 mV	Surface Mount		95 pF

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General part information

Diode 100 V 1A Surface Mount DO-219AB (SMF)

Technical documentation and resources