Specification	MUN5116T1G

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	160 hFE
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Power - Max [Max]	202 mW
Resistor - Base (R1)	4.7 kOhms
Transistor Type	PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

MUN5116 Series

Part	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Resistor - Base (R1)	Current - Collector Cutoff (Max) [Max]	Transistor Type	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package
ON Semiconductor MUN5116T1G	Surface Mount	50 V	250 mV	4.7 kOhms	500 nA	PNP - Pre-Biased	100 mA	202 mW	SC-70 SOT-323	160 hFE
ON Semiconductor MUN5116DW1T1	Surface Mount	50 V	250 mV	4.7 kOhms	500 nA	2 PNP - Pre-Biased (Dual)	100 mA	250 mW	6-TSSOP SC-88 SOT-363	160 hFE	SC-88 SC70-6 SOT-363

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 202 mW Surface Mount SC-70-3 (SOT323)

Technical documentation and resources