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SOT 23-3
Discrete Semiconductor Products

BVSS123LT1G

Active
ON Semiconductor

SINGLE N-CHANNEL SMALL SIGNAL MOSFET 100V, 170MA, 6Ω

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SOT 23-3
Discrete Semiconductor Products

BVSS123LT1G

Active
ON Semiconductor

SINGLE N-CHANNEL SMALL SIGNAL MOSFET 100V, 170MA, 6Ω

Technical Specifications

Parameters and characteristics for this part

SpecificationBVSS123LT1G
Current - Continuous Drain (Id) @ 25°C170 mA
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds20 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)225 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs [Max]6 Ohm
Supplier Device PackageSOT-23-3 (TO-236)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id [Max]2.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.41
10$ 0.25
100$ 0.12
500$ 0.12
1000$ 0.10
Digi-Reel® 1$ 0.41
10$ 0.25
100$ 0.12
500$ 0.12
1000$ 0.10
Tape & Reel (TR) 3000$ 0.07
6000$ 0.07
9000$ 0.06
15000$ 0.06
21000$ 0.06
30000$ 0.06
75000$ 0.06
150000$ 0.06
NewarkEach (Supplied on Full Reel) 1$ 0.07
ON SemiconductorN/A 1$ 0.08

Description

General part information

BVSS123L Series

Automotive Power MOSFET ideal for low power applications. 100V, 170mA, 6 Ohm, Single N-Channel, SOT-23. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.