
Discrete Semiconductor Products
DMP1012UFDF-13
ActiveDiodes Inc
12V 2.11W 15MΩ@4.5V,5A 900MV 1 PIECE P-CHANNEL UDFN2020-6 MOSFETS ROHS
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Discrete Semiconductor Products
DMP1012UFDF-13
ActiveDiodes Inc
12V 2.11W 15MΩ@4.5V,5A 900MV 1 PIECE P-CHANNEL UDFN2020-6 MOSFETS ROHS
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Technical Specifications
Parameters and characteristics for this part
| Specification | DMP1012UFDF-13 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12.6 A, 20 A |
| Drain to Source Voltage (Vdss) | 12 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 1.8 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1344 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-UDFN Exposed Pad |
| Power Dissipation (Max) | 720 mW |
| Rds On (Max) @ Id, Vgs | 15 mOhm |
| Supplier Device Package | U-DFN2020-6 (Type F) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) @ Id | 900 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
DMP1012UCB9 Series
This new generation MOSFET has been designed to minimize theon-state resistance (RDS(on)) and yet maintain superior switchingperformance, making it ideal for high efficiency power managementapplications.
Documents
Technical documentation and resources