Discrete Semiconductor Products

PMZ320UPEYL

Active

MOSFET P-CH 30V 1A DFN1006-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET P-CH 30V 1A DFN1006-3

Technical Specifications

Parameters and characteristics for this part

Specification	PMZ320UPEYL

Current - Continuous Drain (Id) @ 25°C	1 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	1.4 nC
Input Capacitance (Ciss) (Max) @ Vds	122 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-883, SC-101
Power Dissipation (Max)	350 mW, 6.25 W
Rds On (Max) @ Id, Vgs	510 mOhm
Supplier Device Package	SOT-883
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	950 mV

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Package / Case	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Technology	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	FET Type	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]
Freescale Semiconductor - NXP PMZ320UPEYL	1 A	SOT-883	-55 °C	150 °C	30 V	8 V	SC-101 SOT-883	950 mV	122 pF	MOSFET (Metal Oxide)	6.25 W 350 mW	1.5 V 4.5 V	510 mOhm	P-Channel	Surface Mount	1.4 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 30 V 1A (Ta) 350mW (Ta), 6.25W (Tc) Surface Mount SOT-883

Technical documentation and resources