Discrete Semiconductor Products

IXTH160N10T

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POWER MOSFET, N CHANNEL, 100 V, 160 A, 0.0058 OHM, TO-247, THROUGH HOLE

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Discrete Semiconductor Products

Active

POWER MOSFET, N CHANNEL, 100 V, 160 A, 0.0058 OHM, TO-247, THROUGH HOLE

Technical Specifications

Parameters and characteristics for this part

Specification	IXTH160N10T

Current - Continuous Drain (Id) @ 25°C	160 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	132 nC
Input Capacitance (Ciss) (Max) @ Vds	6600 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	430 W
Rds On (Max) @ Id, Vgs	7 mOhm
Supplier Device Package	TO-247 (IXTH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	Technology	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs
Littelfuse/Commercial Vehicle Products IXTH160N10T	N-Channel	10 V	160 A	132 nC	Through Hole	6600 pF	TO-247 (IXTH)	430 W	-55 °C	175 ░C	30 V	4.5 V	MOSFET (Metal Oxide)	100 V	TO-247-3	7 mOhm

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General part information

N-Channel 100 V 160A (Tc) 430W (Tc) Through Hole TO-247 (IXTH)

Technical documentation and resources