Discrete Semiconductor Products

PSMN7R5-60YLX

Active

MOSFET N-CH 60V 86A LFPAK56

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 60V 86A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN7R5-60YLX

Current - Continuous Drain (Id) @ 25°C	86 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	31 nC
Input Capacitance (Ciss) (Max) @ Vds	4570 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max)	147 W
Rds On (Max) @ Id, Vgs	7.5 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.1 V

Part	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	FET Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs
Freescale Semiconductor - NXP PSMN7R5-30YLDX	20 V	4.5 V 10 V	LFPAK56 Power-SO8	Surface Mount	7.5 mOhm	N-Channel	2.2 V	655 pF	-55 °C	175 ░C	34 W	MOSFET (Metal Oxide)	30 V	51 A	SC-100 SOT-669
Freescale Semiconductor - NXP PSMN7R5-60YLX	20 V		LFPAK56 Power-SO8	Surface Mount		N-Channel	2.1 V	4570 pF	-55 °C	175 ░C	147 W	MOSFET (Metal Oxide)	60 V	86 A	SC-100 SOT-669	10 V	5 V	31 nC	7.5 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 86A (Tc) 147W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources