Discrete Semiconductor Products

SIR470DP-T1-GE3

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TRANS MOSFET N-CH 40V 60A 8-PIN POWERPAK SO EP T/R

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Discrete Semiconductor Products

Active

TRANS MOSFET N-CH 40V 60A 8-PIN POWERPAK SO EP T/R

Technical Specifications

Parameters and characteristics for this part

Specification	SIR470DP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	155 nC
Input Capacitance (Ciss) (Max) @ Vds	5660 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	6.25 W, 104 W
Rds On (Max) @ Id, Vgs	2.3 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	FET Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SIR470DP-T1-GE3	2.3 mOhm	-55 °C	150 °C	20 V	N-Channel	2.5 V	155 nC	MOSFET (Metal Oxide)	60 A	Surface Mount	PowerPAK® SO-8	40 V	6.25 W 104 W	PowerPAK® SO-8	4.5 V 10 V	5660 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources