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SOT-363
Discrete Semiconductor Products

NSVMUN531335DW1T1G

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ON Semiconductor

COMPLEMENTARY BIAS RESISTOR TRANSISTORS, 50 V

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SOT-363
Discrete Semiconductor Products

NSVMUN531335DW1T1G

Active
ON Semiconductor

COMPLEMENTARY BIAS RESISTOR TRANSISTORS, 50 V

Technical Specifications

Parameters and characteristics for this part

SpecificationNSVMUN531335DW1T1G
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]80
GradeAutomotive
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Power - Max [Max]187 mW
QualificationAEC-Q101
Resistor - Base (R1)47 kOhms, 2.2 kOhm
Resistor - Emitter Base (R2)47000 Ohms
Supplier Device PackageSC70-6, SC-88, SOT-363
Transistor Type1 NPN Pre-Biased, 1 PNP
Vce Saturation (Max) @ Ib, Ic250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.27
10$ 0.16
100$ 0.10
500$ 0.07
1000$ 0.07
Digi-Reel® 1$ 0.27
10$ 0.16
100$ 0.10
500$ 0.07
1000$ 0.07
Tape & Reel (TR) 3000$ 0.05
6000$ 0.05
9000$ 0.05
15000$ 0.04
21000$ 0.04
30000$ 0.04
75000$ 0.04
150000$ 0.03
300000$ 0.03
NewarkEach (Supplied on Full Reel) 2500$ 0.04
10000$ 0.03
25000$ 0.03
ON SemiconductorN/A 1$ 0.03

Description

General part information

MUN531335DW Series

This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic biasnetwork consisting of two resistors; a series base resistor and abase-emitter resistor. The BRT eliminates these individualcomponents by integrating them into a single device. The use of a BRTcan reduce both system cost and board space.