Discrete Semiconductor Products

IXTA102N15T

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Littelfuse/Commercial Vehicle Products

DISCMSFT NCHTRENCHGATE-GEN1 TO-263D2/ TUBE

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Discrete Semiconductor Products

IXTA102N15T

Active

Littelfuse/Commercial Vehicle Products

DISCMSFT NCHTRENCHGATE-GEN1 TO-263D2/ TUBE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXTA102N15T

Current - Continuous Drain (Id) @ 25°C	102 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	87 nC
Input Capacitance (Ciss) (Max) @ Vds	5220 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	455 W
Rds On (Max) @ Id, Vgs [Max]	18 mOhm
Supplier Device Package	TO-263AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

IXTA102N15T Series

DiscMSFT NChTrenchGate-Gen1 TO-263D2

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max) [Max]	Technology	FET Type
Littelfuse/Commercial Vehicle Products IXTA102N15T	87 nC	-55 °C	175 ░C	10 V	TO-263AA	Surface Mount	5220 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	102 A	150 V	20 V	18 mOhm	455 W	MOSFET (Metal Oxide)	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 4.70
		50	$ 3.73
		100	$ 3.19
		500	$ 2.84
		1000	$ 2.43
		2000	$ 2.29
Newark	Each	100	$ 3.13
		500	$ 2.85
		1000	$ 2.52
		2500	$ 2.34

Description

General part information

IXTA102N15T Series

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density

Documents

Technical documentation and resources