Discrete Semiconductor Products

HAT2175H-EL-E

Active

NCH SINGLE POWER MOSFET 100V 15A 42MOHM LFPAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

NCH SINGLE POWER MOSFET 100V 15A 42MOHM LFPAK

Technical Specifications

Parameters and characteristics for this part

Specification	HAT2175H-EL-E

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	8 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	21 nC
Input Capacitance (Ciss) (Max) @ Vds	1445 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max) [Max]	15 W
Rds On (Max) @ Id, Vgs	42 mOhm
Supplier Device Package	LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Nch Single Power Mosfet 100V 15A 42Mohm Lfpak

Part	Drain to Source Voltage (Vdss)	Technology	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Power Dissipation (Max) [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Operating Temperature	FET Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C
Renesas Electronics Corporation HAT2175H-EL-E	100 V	MOSFET (Metal Oxide)	SC-100 SOT-669	21 nC	Surface Mount	15 W	20 V	8 V 10 V	LFPAK	150 °C	N-Channel	42 mOhm	1445 pF	15 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

The HAT2175H is a Nch Single Power Mosfet 100V 15A 42Mohm Lfpak.

Technical documentation and resources