Discrete Semiconductor Products

NTZD3155CT1H

Obsolete

MOSFET N/P-CH 20V SOT563

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Discrete Semiconductor Products

Obsolete

MOSFET N/P-CH 20V SOT563

Technical Specifications

Parameters and characteristics for this part

Specification	NTZD3155CT1H

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	540 mA, 430 mA
Drain to Source Voltage (Vdss)	20 V
Input Capacitance (Ciss) (Max) @ Vds	150 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-666, SOT-563
Power - Max [Max]	250 mW
Rds On (Max) @ Id, Vgs [Max]	550 mOhm
Supplier Device Package	SOT-563
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Complementary Small Signal MOSFET with ESD protection 20V

Part	Vgs(th) (Max) @ Id	Supplier Device Package	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Configuration	FET Feature	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Package / Case	Technology	Drain to Source Voltage (Vdss)
ON Semiconductor NTZD3155CT5G	1 V	SOT-563	Surface Mount	150 pF	N and P-Channel	Logic Level Gate	430 mA 540 mA	550 mOhm	-55 °C	150 °C	250 mW	SOT-563 SOT-666	MOSFET (Metal Oxide)	20 V
ON Semiconductor NTZD3155CT1H	1 V	SOT-563	Surface Mount	150 pF	N and P-Channel		430 mA 540 mA	550 mOhm	-55 °C	150 °C	250 mW	SOT-563 SOT-666	MOSFET (Metal Oxide)	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Small Signal MOSFETComplementary 20 V, 540 mA / −430 mA,with ESD protection, SOT−563 package.

Technical documentation and resources