Discrete Semiconductor Products

SI7818DN-T1-E3

LTB

MOSFET N-CH 150V 2.2A PPAK1212-8

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Discrete Semiconductor Products

LTB

MOSFET N-CH 150V 2.2A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7818DN-T1-E3

Current - Continuous Drain (Id) @ 25°C	2.2 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	1.5 W
Rds On (Max) @ Id, Vgs	135 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	FET Type	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division SI7818DN-T1-E3	20 V	MOSFET (Metal Oxide)	2.2 A	150 V	135 mOhm	4 V	PowerPAK® 1212-8	30 nC	Surface Mount	-55 °C	150 °C	6 V 10 V	PowerPAK® 1212-8	N-Channel	1.5 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 150 V 2.2A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Technical documentation and resources